*rohs directive 2002/95/ec jan 27 2003 including annex july 2003 ?revised may 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxj3bj overvoltage protector series tisp4070j3bj thru tisp4395j3bj bidirectional thyristor overvoltage protectors smb package (top view) *rohs compliant ion-implanted breakdown region - precise and stable voltage low voltage overshoot under surge designed for transformer center tap (ground return) overvoltage protection - enables gr-1089-core compliance - high holding current allows protection of data lines with d.c power feed can be used to protect rugged modems designed for exposed applications exceeding tia-968-a device name v drm v v (bo) v tisp4070j3bj 58 70 tisp4080j3bj 65 80 tisp4095j3bj 75 95 tisp4115j3bj 90 115 tisp4125j3bj 100 125 tisp4145j3bj 120 145 tisp4165j3bj 135 165 tisp4180j3bj 145 180 tisp4200j3bj 155 200 tisp4219j3bj 180 219 tisp4250j3bj 190 250 tisp4290j3bj 220 290 tisp4350j3bj 275 350 tisp4395h3bj 320 395 md-smb-004-a t r1 2 device symbol t r sd-tisp4xxx-001-a description the range of ti s p4xxxj3bj devices is designed to limit overvoltages on telecom lines. the ti s p4xxxj3bj is primarily designed to address gr-1089-core compliance on data transmission lines with d.c. power feeding. when overvoltage protection is applied to transform er coupled lines from the transformer center tap to ground, the total ground return current can be 200 a, 10/1000 and 1000 a, 2/10. the hi gh 150 ma holding current is set above common d.c. feed system levels to allow the ti s p4xxxj3bj to reset following a disturbance. these devices allow signal voltages, without clipping, up to the maximum off-state voltage value, v drm , see figure 1. voltages above v drm are limited and will not exceed the breakover voltage, v (bo) , level. if sufficient current flows due to the overvoltage, the device switches into a low voltage on-state condition, which diverts the current from the overvoltage through the device. when the diverted current fa lls below the holding current, i h , level the devices switches off and restores normal system operation. how to order device package carrier order as marking code standard quantity tisp4xxxj3bj smb embo ss ed tape reeled tisp4xxxj3bjr-s 4xxxj3 3000 in s ert xxx corre s ponding to device name. ..................................................ul recognized component rated for international surge wave shapes wave shape standard i ppsm a 2/10 g r-1089-core 1000 8/20 iec 61000-4-5 800 10/160 tia-968-a 400 10/700 itu-t k.20/21/45 350 10/560 tia-968-a 250 10/1000 g r-1089-core 200
july 2003 ?revised may 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxj3bj overvoltage protector series absolute maximum ratings, t a = 25 ? (unless otherwise noted) t i n u e u l a v l o b m y s g n i t a r repetitive pea k off- s tate voltage ?4070j3bj ?4080j3bj ?4095j3bj ?4115j3bj ?4125j3bj ?4145j3bj ?4165j3bj ?4180j3bj ?4200j3bj ?4219j3bj ?4250j3bj ?4290j3bj ?4350j3bj ?4395j3bj v drm 58 65 75 90 100 120 135 145 155 180 190 220 275 320 v non-repetitive pea k impul s e current ( s ee note s 1 and 2) 2/10 s ( g r-1089-core, 2/10 s voltage wave s hape) 8/20 s (iec 61000-4-5, combination wave generator, 1.2/50 s voltage wave s hape) 10/160 s (tia-968-a, 10/160 s voltage wave s hape) 4/250 s (itu-t k.20/21, 10/700 s voltage wave s hape, s imultaneou s ) 5/310 s (itu-t k.20/21, 10/700 s voltage wave s hape, s ingle) 5/320 s (tia-968-a, 9/720 s voltage wave s hape, s ingle) 10/560 s (tia-968-a, 10/560 s voltage wave s hape) 10/1000 s ( g r-1089-core, 10/1000 s voltage wave s hape) i ppsm 1000 800 400 370 350 350 250 200 a non-repetitive pea k on- s tate current ( s ee note s 1 and 2) i tsm 50 a 20 m s , 50 hz (full s ine wave) initial rate of ri s e of on- s ta i d a 0 5 < e u l a v p m a r m u m i x a m . p m a r t n e r r u c r a e n i l . t n e r r u c e t t /dt 800 a/ s junction temperature t j -40 to +150 c storage temperature range t s tg -65 to +150 c notes: 1. initially the device mu s t be in thermal equilibrium with t j = 25 c. 2. the s e non-repetitive rated current s are pea k value s of either polarity. the s urge may be repeated after the device return s to it s initial condition s . electrical characteristics, t a = 25 ? (unless otherwise noted) t i d n o c t s e t r e t e m a r a p t i n u x a m p y t n i m s n o i i drm repetitive pea k off- s tate current v d = v drm t a = 25 c t a = 85 c 5 10 a v (bo) ac brea k over voltage dv/dt = 250 v/m s , r source = 300 ?4070j3bj ?4080j3bj ?4095j3bj ?4115j3bj ?4125j3bj ?4145j3bj ?4165j3bj ?4180j3bj ?4200j3bj ?4219j3bj ?4250j3bj ?4290j3bj ?4350j3bj ?4395j3bj 70 80 95 115 125 145 165 180 200 219 250 290 350 395 v
july 2003 ?revised may 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxj3bj overvoltage protector series electrical characteristics, t a = 25 ? (unless otherwise noted) (continued) v (bo) ramp brea k over voltage dv/dt 1000 v/ s , linear voltage ramp, maximum ramp value = 500 v di/dt = 20 a/ s , linear current ramp, maximum ramp value = 10 a ?4070j3bj ?4080j3bj ?4095j3bj ?4115j3bj ?4125j3bj ?4145j3bj ?4165j3bj ?4180j3bj ?4200j3bj ?4219j3bj ?4250j3bj ?4290j3bj ?4350j3bj ?4395j3bj 77 88 104 125 135 156 177 192 212 231 263 303 364 409 v i (bo) brea k over current dv/dt = 250 v/m s , r source = 300 ?4070j3bj thru ?4115j3bj 900 ma ?4125j3bj thru ?4219j3bj 800 ?4250j3bj thru ?4395j3bj 600 i h holding current i t a m 0 0 6 0 5 1 s m / a m 0 3 = t d / i d , a 5 = dv/dt critical rate of ri s e of off- s tate voltage linear voltage ramp maximum ramp value < 0.85v drm 5 k v/ s i d off- s tate current v d t v 0 5 = a = 85 c 10 a c o off- s tate capacitance f = 1 mhz, v d = 1 v rm s , v d = 0 ?4070j3bj thru ?4115j3bj 195 235 pf ?4125j3bj thru ?4219j3bj 120 145 ?4250j3bj thru ?4395j3bj 105 125 f = 1 mhz, v d = 1 v rm s , v d = -1 v ?4070j3bj thru ?4115j3bj 180 215 ?4125j3bj thru ?4219j3bj 110 132 ?4250j3bj thru ?4395j3bj 95 115 f = 1 mhz, v d = 1 v rm s , v d = -2 v ?4070j3bj thru ?4115j3bj 165 200 ?4125j3bj thru ?4219j3bj 100 120 ?4250j3bj thru ?4395j3bj 90 105 f = 1 mhz, v d = 1 v rm s , v d = -50 v ?4070j3bj thru ?4115j3bj 85 100 ?4125j3bj thru ?4219j3bj 50 60 ?4250j3bj thru ?4395j3bj 42 50 f = 1 mhz, v d = 1 v rm s , v d = -100 v ( s ee note 3) ?4125j3bj thru ?4219j3bj 40 50 ?4250j3bj thru ?4395j3bj 35 40 note: 3. to avoid po ss ible clipping, the tisp4125j3bj i s te s ted with v d = -98 v. t i d n o c t s e t r e t e m a r a p t i n u x a m p y t n i m s n o i thermal characteristics t i n u x a m p y t n i m s n o i t i d n o c t s e t r e t e m a r a p r ja junction to ambient thermal re s i s tance eia/jesd51-3 pcb, i t = i tsm(1000) ( s ee note 4) 90 c/w note: 4. eia/jesd51-2 environment and pcb ha s s tandard footprint dimen s ion s connected with 5 a rated printed wiring trac k width s .
july 2003 ?revised may 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxj3bj overvoltage protector series parameter measurement information -v i (br) v (br) v (br)m v drm i drm v d i h i t v t i trm i ppsm v (bo) i (bo) i d quadrant i switching characteristic +v +i v (bo) i (bo) i (br) v (br) v (br)m v drm i drm v d i d i h i t v t i trm i ppsm -i quadrant iii switching characteristic i tsm i tsm figure 1. voltage-current characteristic for t and r terminals all measurements are referenced to the r terminal pm-tisp4xxx-001-a
july 2003 ?revised may 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxj3bj overvoltage protector series typical characteristics . 3 e r u g i f . 2 e r u g i f . 5 e r u g i f . 4 e r u g i f off-state current vs junction temperature t j - junction temperature - c -25 0 25 50 75 100 125 150 |i d | - off-state current - ? 0 001 0?1 0 1 1 10 100 tc4jag v d = ?0 v normalized breakover voltage vs junction temperature t j - junction temperature - ? -25 0 25 50 75 100 125 150 normalized breakover voltage 0.90 0.95 1.00 1.05 1.10 1.15 tc4jaf normalized holding current vs junction temperature t j - junction temperature - ? -25 0 25 50 75 100 125 150 normalized holding current 0.4 0.5 0.6 0.7 0.8 0.9 1.5 2.0 1.0 tc4jad normalized capacitance vs off-state voltage v d - off-state voltage - v 0.5 1 2 3 5 10 20 30 50 100 150 capacitance normalized to v d = 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 t j = 25 ? v d = 1 vrms tc4jabb
july 2003 ?revised may 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxj3bj overvoltage protector series rating and thermal information . 7 e r u g i f . 6 e r u g i f non-repetitive peak on-state current vs current duration t - current duration - s 0? 1 10 100 1000 i tsm(t) - non-repetitive peak on-state current - a 2 3 4 5 6 7 8 9 15 20 30 40 10 ti4jaa v gen = 600 vrms, 50/60 hz r gen = 1.4*v gen /i tsm(t) eia/jesd51-2 environment eia/jesd51-3 pcb t a = 25 ? v drm derating factor vs minimum ambient temperature t a(min) - minimum ambient temperature - ? -35 -25 -15 -5 5 15 25 -40 -30 -20 -10 0 10 20 derating factor 0.93 0.94 0.95 0.96 0.97 0.98 0.99 1.00 ti4jadca '4070j3bj thru '4115j3bj '4125j3bj thru '4219j3bj '4250j3bj thru '4395j3bj
july 2003 ?revised may 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4xxxj3bj overvoltage protector series applications information figure 8. typical application circuit figure 9. typical application circuit ai4mmabb r t ring detector hook switch polarity bridge relay dc sink signal c1 tisp 4350j3bj th1 high current fuse f1 r1 d5 d6 d7 oc1 protection d1 d2 d3 d4 isolation barrier t1 c2 r2 c3 ai4mmab tx tisp4350j3bj t f1a r f1b rx t f2a r f2b f1 & f2 = b1250t tisp4350j3bj d.c. feed
july 2003 ?revised may 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. ?isp?is a trademark of bourns, ltd., a bourns company, and is registered in u.s. patent and trademark office. ?ourns?is a registered trademark of bourns, inc. in the u.s. and other countries. bourns sales offices region phone fax the americas: +1-951-781-5500 +1-951-781-5700 europe: +41-41-7685555 +41-41-7685510 asia-pacific: +886-2-25624117 +886-2-25624116 technical assistance region phone fax the americas: +1-951-781-5500 +1-951-781-5700 europe: +41-41-7685555 +41-41-7685510 asia-pacific: +886-2-25624117 +886-2-25624116 www.bourns.com bourns ? products are available through an extensive network of manufacturer?s representatives, agents and distributors. to obtain technical applications assistance, a q uotation, or to place an order, contact a bourns representative in your area.
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